| PART |
Description |
Maker |
| UP04314 |
Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
| UP03312 |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| XN0A312G |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
Panasonic
|
| NP0H3A3 |
Silicon PNP epitaxial planar type (Tr1), Silicon NPN epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| KTX311T |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KEC[KEC(Korea Electronics)]
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SD1275A 2SD1275 |
Silicon NPN triple diffusion planar type Darlington(For power amplification)
Silicon PNP epitaxial planar type Darlington
|
PANASONIC[Panasonic Semiconductor]
|
| MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| DZ2S10000L |
Silicon epitaxial planar type For constant voltage / For surge absorption circuit DZ2J100 in SSMini2 type package
|
Panasonic Semiconductor
|
| 2SB1492 2SD2254 2SB1490 2SD2250 |
Silicon NPN triple diffusion planar type Darlington(For power amplification)
Silicon PNP epitaxial planar type Darlington(For power amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| DZ2J056M0L |
Silicon epitaxial planar type For constant voltage waveform clipper and surge absorption circuit Low noise type
|
Panasonic Semiconductor
|
